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arXiv:1306.3008cond-mat.mtrl-sci

Large-gap quantum spin Hall insulators in tin films

Yong Xu, Binghai Yan, Hai-Jun Zhang, Jing Wang, Gang Xu, Peizhe Tang, Wenhui Duan, Shou-Cheng Zhang

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Abstract

The search of large-gap quantum spin Hall (QSH) insulators and effective approaches to tune QSH states is important for both fundamental and practical interests. Based on first-principles calculations we find two-dimensional tin films are QSH insulators with sizable bulk gaps of 0.3 eV, sufficiently large for practical applications at room temperature. These QSH states can be effectively tuned by chemical functionalization and by external strain. The mechanism for the QSH effect in this system is band inversion at the Γpoint, similar to the case of HgTe quantum well. With surface doping of magnetic elements, the quantum anomalous Hall effect could also be realized.

arXiv comments
Journal reference
Phys. Rev. Lett. 111, 136804 (2013)
DOI
doi:10.1103/PhysRevLett.111.136804
Subjects
cond-mat.mtrl-sciMaterials Science

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  1. Physicists announce graphene’s latest cousin: stanene 1 comment

    • If you want to read the details on how it works, I suggest this paper [1] "Large-gap quantum spin Hall insulators in tin films". The real hope is that this will be a replacement for the conductors in traditional silicon. You still have the heat bottleneck when you hit a…

      btashtonView on HNParent context

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