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<rss version="2.0" xmlns:atom="http://www.w3.org/2005/Atom"><channel><title>Large-gap quantum spin Hall insulators in tin films · HackerPapers discussions</title><link>https://hackerpaper.kaipfister.de/p/1306.3008/</link><description>Collected HN comments and submissions linking this paper.</description><language>en</language><lastBuildDate>Mon, 02 Nov 2026 11:16:22 GMT</lastBuildDate><atom:link href="https://hackerpaper.kaipfister.de/p/1306.3008/feed.xml" rel="self" type="application/rss+xml" /><item><title>Large-gap quantum spin Hall insulators in tin films — mentioned by btashton</title><link>https://news.ycombinator.com/item?id=10001921</link><guid isPermaLink="false">urn:hackerpapers:mention:1306.3008:10001921</guid><pubDate>Tue, 04 Aug 2015 06:07:09 GMT</pubDate><description>&lt;p&gt;If you want to read the details on how it works, I suggest this paper [1] &amp;quot;Large-gap quantum spin Hall insulators in tin films&amp;quot;. The real hope is that this will be a replacement for the conductors in traditional silicon. You still have the heat bottleneck when you hit a traditional conductor. The dissipation free property breaks down at about 100C for this material, so you are going to have an issue with what ever is interacting with that 200A. [1] http://arxiv.org/pdf/1306.3008&lt;/p&gt;&lt;p&gt;&lt;a href="https://hackerpaper.kaipfister.de/p/1306.3008/"&gt;Paper and discussion history&lt;/a&gt;. A mention is not an endorsement.&lt;/p&gt;</description><category>cond-mat.mtrl-sci</category></item></channel></rss>
