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<rss version="2.0" xmlns:atom="http://www.w3.org/2005/Atom"><channel><title>Possibility of a Metallic Field-Effect Transistor · HackerPapers discussions</title><link>https://hackerpaper.kaipfister.de/p/cond-mat_0401162/</link><description>Collected HN comments and submissions linking this paper.</description><language>en</language><lastBuildDate>Mon, 02 Nov 2026 11:16:22 GMT</lastBuildDate><atom:link href="https://hackerpaper.kaipfister.de/p/cond-mat_0401162/feed.xml" rel="self" type="application/rss+xml" /><item><title>Possibility of a Metallic Field-Effect Transistor — mentioned by typon</title><link>https://news.ycombinator.com/item?id=8048998</link><guid isPermaLink="false">urn:hackerpapers:mention:cond-mat_0401162:8048998</guid><pubDate>Thu, 17 Jul 2014 17:45:45 GMT</pubDate><description>&lt;p&gt;You don&amp;#x27;t know if Intel&amp;#x27;s tech is ready. It&amp;#x27;s classified for the machine manufacturers to disclose if Intel&amp;#x27;s their customer. I tried really hard to ask this Intel guy at IEDM what they&amp;#x27;re using for 10nm research and he wouldn&amp;#x27;t say anything. E-beam lithography has been the work horse for research in fabrication for decades now. You can&amp;#x27;t get better resolution than E-beam lithography. The wavelength of an electron at 5kV acceleration is something like 0.017 nm. There are some crazy people who are trying to make E-beam systems for production processes (multiple beams, etc.), but I don&amp;#x27;t think…&lt;/p&gt;&lt;p&gt;&lt;a href="https://hackerpaper.kaipfister.de/p/cond-mat_0401162/"&gt;Paper and discussion history&lt;/a&gt;. A mention is not an endorsement.&lt;/p&gt;</description><category>cond-mat.mtrl-sci</category></item></channel></rss>
