Enhanced LPDDR4X PHY in 12 nm FinFET

Abstract

The demand for memory technologies with high bandwidth, low power consumption, and enhanced reliability has led to the emergence of LPDDR4X DRAM memory. However, power efficiency and reliability depend not only on the memory device but also on its interfacing. To enable advanced monitoring of LPDDR4X DRAM devices and interface tuning, we propose a LPDDR4X PHY implemented in 12 nm FinFET technology. A RISC-V subsystem offers software-controlled DRAM interface access as well as external interfaces to connect additional sensors for monitoring temperature and current consumption of LPDDR4X DRAM devices.