STRAW: A Stress-Aware WL-Based Read Reclaim Technique for High-Density NAND Flash-Based SSDs — mentioned by petu

Tue, 04 Aug 2026 10:40:11 GMT

Hm, I asked 5.6 Sol to calculate/research and it came up with way less optimistic lifespan than Gemini (that I've asked last year). It claims that each individual page read induces read disturb across whole block. And references https://arxiv.org/pdf/2501.02517 that tested Samsung 3D TLC and found ~518K sequential page reads in a block to be ECC threshold (although it's unclear how they got 518K number -- e.g. is it single worst chip they've tried? authors brings up 160 chip sample size later on). With 7704 pages in a block that's only ~70 sequential block reads till data is lost and to…

Paper and discussion history. A mention is not an endorsement.

STRAW: A Stress-Aware WL-Based Read Reclaim Technique for High-Density NAND Flash-Based SSDs · HackerPapers discussions

STRAW: A Stress-Aware WL-Based Read Reclaim Technique for High-Density NAND Flash-Based SSDs — mentioned by petu