High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures · HackerPapers discussionshttps://hackerpaper.kaipfister.de/p/2102.05982/Collected HN comments and submissions linking this paper.enMon, 02 Nov 2026 11:16:22 GMTHigh-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures — mentioned by magicalhippohttps://news.ycombinator.com/item?id=39750779urn:hackerpapers:mention:2102.05982:39750779Mon, 18 Mar 2024 22:23:07 GMT<p>Full paper here[1]. Hadn&#x27;t heard of diamond CMOS technology before so did some brief digging. Here&#x27;s[2] the preprint of the article they refer to for the P-type diamond FET. It uses boron nitride as the insulating layer and graphite for the gate. I also found this[3] paper discussing a P-type diamond FET using aluminium oxide as the insulating layer, which is also used for the N-type diamond FET. Some excerpts from the full article: For high-frequency operation, compared with H-terminated transistors with a cutoff frequency of over GHz, the series resistance is still large for n-type diamond…</p><p><a href="https://hackerpaper.kaipfister.de/p/2102.05982/">Paper and discussion history</a>. A mention is not an endorsement.</p>cond-mat.mtrl-sci